Metal organic chemical vapour deposition regrown large area GaN‐on‐GaN current aperture vertical electron transistors with high current capability

Removing the current-limit of vertical organic field effect transistors

High-Current Gain Two-Dimensional MoS₂-Base Hot-Electron Transistors.

The vertical transport of nonequilibrium charge carriers through semiconductor heterostructures has led to milestones in electronics with the development of the hot-electron transistor. Recently, significant advances have been made with atomically sharp heterostructures implementing various two-dimensional materials. Although graphene-base hot-electron transistors show great promise for electro...

InGaN channel high electron mobility transistor structures grown by metal organic chemical vapor deposition

High electron mobility transistor (HEMT) structures of AlInGaN/AlN/InGaN/GaN were grown by metal-organic chemical vapor deposition. A combination of low growth rate and high growth temperature during synthesis of the InGaN channel layer led to significant improvement in HEMT electron transport properties. The improvement was correlated with an evolution of both surface roughness and photolumine...

Metal-face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy

Ohmic regrowth by molecular beam epitaxy (MBE) has been investigated for metal-face InAlN/AlN/GaN high electron mobility transistors (HEMTs) for the first time. Using SiO2 mask nþ-GaN was regrown in the source/drain region while deposition on the mask was lifted off in buffered HF after regrowth. The lowest contact resistance measured was 0.40 0.23Vmm by the transmission line method (TLM) in th...

(001)-oriented PbTiO3 ferroelectric thin films grown on by metal-organic chemical vapour deposition

PbTiOs ferroelectric thin films have been prepared on Si (001) by metal-organic chemical vapour deposition. The ai-grown films Were characterized by scanning electmn microscopy, x-ray diffraction and Raman spectroscopy. It is shown that the films were highly (001) oriented and had essentially the same lanice constants as the bulk single crystal. However, the %-grown films were subject to intern...